gallium arsenide semiconductor
英
美 [ˈɡæliəm ˈɑrsəˌnaɪd ˈsemikəndʌktər]
网络 砷化镓半导体
双语例句
- Photo-Ionization Effects in High Gain Gallium Arsenide Photoconductive Semiconductor Switches
高增益砷化镓光导开关中的光致电离效应 - Gallium Arsenide ( GaAs) is important compound semiconductor material. It has high electron transfer rate and direct transition energy band structure. GaAs is fit to be made into high frequency, high speed, endure heat, anti-radiation and luminescence apparatus.
砷化镓（GaAs）是一种重要的化合物半导体材料，具有电子迁移率高、直接跃迁型能带结构等优点，适合于制造高频、高速、耐高温、抗辐射和发光器件。 - Gallium arsenide is one of the most important and most widely used semiconductor materials.
砷化镓是化合物半导体中最重要、用途最广泛的半导体材料之一。 - Gallium Arsenide ( GaAs) is one of the most important compound semiconductor materials for national defense and satellites communication due to its high electron mobility and direct band gap.
砷化镓（GaAs）半导体材料在国防、卫星通讯等领域有极其重要的作用。 - Single crystal gallium arsenide is a new semiconductor material has developed after germanium and silicon.
单晶砷化镓材料是继锗、单晶硅之后发展起来的新一代半导体材料。